The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Mar. 03, 2003
Applicant:
Inventors:
Dirk Efferenn, Dresden, DE;
Hans-Peter Moll, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1762 ; H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1762 ; H01L 2/1311 ;
Abstract
A method is disclosed for filling a depression between two vertically adjoining semiconductor layers, in particular an edge depression arising in the context of an isolation trench formation. A covering layer, preferably made of silicon oxide, is deposited in a large-area manner and is then doped with doping material, preferably nitrogen, essentially right over the entire depth of the layer. The doping material provides for an increased rate of removal of the covering layer, so that, after the removal process, the covering layer material only remains in the depressions.