The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Dec. 31, 2002
Yusuke Kawase, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Provided is a semiconductor device manufacturing method in which the numbers of photolithography and anisotropic dry etching processes are reduced to simplify the manufacturing steps; and it is avoided that the presence of an etching stopper film complicates the manufacturing steps in a region where no capacitor is formed, and also causes malfunction in a contact plug. Specifically, an anisotropic dry etching using a resist mask (RM ) is performed to form an opening (OP ) extending through at least an interlayer insulating film ( ). Even after an etching stopper film ( ) is exposed to the bottom part of the opening (OP ), the anisotropic dry etching is continued, using the etching stopper film ( ) as etching mask, in order to form a contact hole (CH ) extending through an interlayer insulating film ( ) to source/drain regions ( ). Therefore, the opening (OP ) and contact hole (CH ) are obtainable at a time in the same etching step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile