The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Oct. 21, 2002
Geum-Jong Bae, Kyunggi-do, KR;
Nae-In Lee, Seoul, KR;
Hwa-Sung Rhee, Seoul, KR;
Sang-Su Kim, Yongin, KR;
Jung-Il Lee, Gimcheon, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A MOS transistor having a T-shaped gate electrode and a method for fabricating the same are provided, wherein the MOS transistor includes a T-shaped gate electrode on a semiconductor substrate; an L-shaped lower spacer disposed at both sides of the gate electrode to cover a top surface of the semiconductor substrate; and low-, mid-, and high-concentration impurity regions formed in the semiconductor substrate of both sides of the gate electrode. The high-concentration impurity region is disposed in the semiconductor substrate next to the lower spacer and the mid-concentration impurity region is disposed between the high- and low-concentration impurity regions. A MOS transistor according to the present invention provides a decrease in a capacitance, a decrease in a channel length, and an increase in a cross-sectional area of the gate electrode. At the same time, the mid-concentration impurity region provides a decrease in a source/drain resistance R .