The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2004

Filed:

May. 10, 2002
Applicant:
Inventors:

Sia Choon Beng, Singapore, SG;

Yeo Kiat Seng, Singapore, SG;

Sanford Chu, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 5/00 ;
U.S. Cl.
CPC ...
H01F 5/00 ;
Abstract

A silicon-based inductor in a semiconductor is disclosed. One embodiment provides for an inductor having a metal region comprising turns. The metal region has spacing between adjacent turns. The width of the spacing varies. The spacing is pre-determined to optimize the performance of the inductor by reducing eddy currents in the turns and reducing eddy currents induced in a substrate. One embodiment provides for an inductor having a spiral structure. The spiral structure may have a number of turns with the spacing between the turns of the inductor being larger near the inside of the spiral structure. A large spacing between the inductor's inner turns may serve to reduce both conductor eddy currents and the induced substrate current. Thus, the structure improves the inductor's overall performance.


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