The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2004

Filed:

Aug. 21, 2002
Applicant:
Inventors:

Katsuhiro Itakura, Itami, JP;

Akihiro Hachigo, Itami, JP;

Hideaki Nakahata, Itami, JP;

Satoshi Fujii, Itami, JP;

Shinichi Shikata, Itami, JP;

Assignee:

Seiko Epson Corporation, Nagano-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/25 ; H03H 9/145 ;
U.S. Cl.
CPC ...
H03H 9/25 ; H03H 9/145 ;
Abstract

A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer ; (b) a ZnO layer , with a thickness of tz, formed on the diamond layer ; (c) interdigital transducers (IDTs) , which excite and receive a SAW, formed on the ZnO layer ; and (d) an SiO layer , with a thickness of ts, formed on the ZnO layer so that the SiO layer can cover the IDTs . The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.


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