The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Feb. 07, 2003
Tzu-Kun Ku, Taipei, TW;
Chia-Yang Wu, Tainan, TW;
Abstract
A method for forming a damascene structure. An insulating layer is deposited on a substrate. A capping layer and a hard mask layer are successively formed on the insulating layer. Subsequently, the hard mask layer is etched to form at least one opening using the capping layer as an etching stop layer. A conformable metal layer is formed over the hard mask layer and the surface of the opening, and the metal layer is then anisotropically etched to form a metal spacer over the sidewall of the opening. Next, the capping layer and the underlying insulating layer under the opening are etched to form a trench therein. Next, the hard mask layer and the metal spacer are removed. Finally, the trench is filled with the conductive layer to complete the damascene structure after the substrate is cleaned.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile