The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jun. 11, 2002
Kiyoteru Kobayashi, Hyogo, JP;
Osamu Sakamoto, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The non-volatile semiconductor memory device includes: a semiconductor substrate having a main surface; N diffusion layers formed spaced from each other at the main surface of the semiconductor substrate; a floating gate formed on a region between the N diffusion layers with a silicon oxide film interposed; an access gate formed adjacent to the floating gate on the region between N diffusion layers with a silicon oxide film interposed; and a control gate formed on the floating gate with an interlayer insulating film interposed. The N diffusion layer is provided between the floating gates, and another N diffusion layer is provided between the access gates. Thus performance of a memory transistor in a non-volatile semiconductor memory device is improved, reliability of the device is improved and miniaturization of the device is facilitated.