The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2004

Filed:

Jun. 19, 2002
Applicant:
Inventors:

Sung-Kwon Lee, Ichon, KR;

Sang-Ik Kim, Ichon, KR;

Weon-Joon Suh, Ichon, KR;

Min-Seok Lee, Ichon, JP;

Kuk-Han Yoon, Ichon, KR;

Assignee:

Hynix Semiconductor Inc., Hyoungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10L 2/1302 ; H10L 2/1461 ;
U.S. Cl.
CPC ...
H10L 2/1302 ; H10L 2/1461 ;
Abstract

A method for manufacturing a semiconductor memory device includes the steps of forming a mask layer on a target layer to be etched, coating a photoresist on the mask layer, exposing the photoresist by using a light resource whose wavelength is of about 157 nm to 193 nm, forming a photoresist pattern by developing the photoresist, forming a mask pattern by selectively etching the mask layer with an etching gas except of fluorine-based gases by using the photoresist pattern as an etching mask; and selectively etching the target layer by using the mask pattern as an etching mask.


Find Patent Forward Citations

Loading…