The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Dec. 28, 1999
Applicant:
Inventors:
Masataka Kase, Kawasaki, JP;
Toshiki Miyake, Kawasaki, JP;
Mitsuaki Hori, Kawasaki, JP;
Kenichi Hikazutani, Kawasaki, JP;
Manabu Nakamura, Kawasaki, JP;
Takayuki Wada, Kawasaki, JP;
Yoshikazu Kataoka, Kasugai, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1265 ; H01L 2/1425 ; H01L 2/124 ;
U.S. Cl.
CPC ...
H01L 2/1265 ; H01L 2/1425 ; H01L 2/124 ;
Abstract
A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.