The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jan. 02, 2002
Chia-Fu Yeh, Taipei, TW;
United Microelectronics Corporation, Hsin-Chu, TW;
Abstract
A method for inspecting a pattern defect process is disclosed, in which a layer is formed to raise a signal-to-noise ratio on the substrate. This invention also provides a method for inspecting a pattern defect process. First of all, a substrate is provided. Then, a device profile is formed on the substrate, wherein the device profile comprises a defect portion. Then, a layer is formed on the device profile and the substrate, wherein the layer has an etch selectivity different from the etch selectivity of the device profile. Next, the layer is removed partially to stop on the device profile and to cause a revere mask. Then, the device profile is etched on the substrate by using the revere mask as a mask. Finally, the revere mask is removed.