The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Feb. 28, 2002
Sridhar K. Kailasam, Fremont, CA (US);
Ronald A. Powell, San Carlos, CA (US);
E. Derryck Settles, Franklin, MA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A mosaic or inlaid sputter target design suitable for conventional planar magnetron deposition, RF ionized physical vapor deposition, HCM ionized PVD, ionized metal plasma (IMP) deposition, or self-ionized plasma (SIP) deposition of multi-component alloys for use in integrated circuit metallization. Inlays are inserted within a planar sputter target in the shape of wedges, wires, or buttons to achieve uniform deposition of films on semiconductor substrates during sputtering. Metal alloy strips within a three-dimensional HCM target achieve the same uniform deposition. The deposition leads to the production of CuAl, CuBe, CuB, CuCd, CuCo, CuCr, CuIn, CuPd, CuSn, CuTa, CuTi, CuZr or CuZn alloy films deposited on the wafer. Non-copper films may also be deposited. The inlay-target adjoining surfaces may be machine stepped or tapered to limit wicking from the target backing material.