The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6707341 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 16, 2004

Filed:

Jul. 11, 2001
Applicant:
Inventors:

Kazuya Yamamoto, Hyogo, JP;

Satoshi Suzuki, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 ;
U.S. Cl.
CPC ...
H03F 3/04 ;
Abstract

A single transistor device is configured of a plurality of transistor cells divided and arranged in a plurality of blocks. Corresponding to the blocks a plurality of bias current supply circuits are arranged, respectively, to supply the blocks with individual bias currents, respectively. The bias current supply circuits each have a transistor with a bias condition set to decrease its ability to drive current as the corresponding bias current increases. Thus a negative feedback can be given to an increase in bias current attributed to thermal unevenness.


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Yamamoto, Kazuya. (2004). Semiconductor device with bipolar transistor device (U.S. Patent No. 6707341). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6707341

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