The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Jul. 15, 2002
Jenspeter Rau, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
In an EUV reflection mask which is set up for region-by-region exposure of a radiation-sensitive layer lying on a semiconductor wafer by means of radiation in the spectral region of extreme ultraviolet radiation, which radiation is reflected at the mask, patterns are written directly into a multilayer layer, lying on a substrate, by means of a focused laser beam or by ion implantation, the reflectivity of which patterns is reduced by more than 90% compared with the reflectivity of the regions that are not written to, and which patterns form the radiation-absorbing regions of the mask. This avoids the shadowing of the exposure radiation that is incident at a small angle, said shadowing occurring with the use of the EUV reflection masks that have been customary heretofore.