The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Mar. 13, 2000
Yoshitsugu Tsutsumi, Minori, JP;
Yoshio Okamoto, Minori, JP;
Hideki Tomioka, Hannou, JP;
Akira Ohkawa, Oume, JP;
Toshio Ando, Kunitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method of and an apparatus for manufacturing semiconductors, in which a liquid raw material can be uniformly supplied onto a wafer and a gas required for film formation can be also uniformly supplied onto the wafer. A liquid raw material is sprayed from a tip end of a vaporizing nozzle into a vacuum chamber as liquid droplets, and is vaporized by heat generated from the wafer placed on a susceptor. When the liquid raw material is sprayed, a gas required for film forming reaction is supplied into the vacuum chamber from a gas supply pipe provided on an outer periphery of the vaporizing nozzle. The vaporizing nozzle and the gas supply pipe are formed to be concentric, and a liquid raw material spray port is formed centrally of the vaporizing nozzle. A gas supply port or ports on the gas supply pipe are formed on an outer peripheral portion of the vaporizing nozzle to be arranged in annular manner, and the liquid raw material spray port and the gas supply port or ports are formed to be in parallel to each other in a longitudinal direction. The gas supply port or ports are arranged in the same plane as the liquid raw material spray port is, or on an upstream side where the liquid raw material is supplied.