The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Feb. 13, 2002
Applicant:
Inventors:
Tomohiko Shibata, Nagoya, JP;
Mitsuhiro Tanaka, Nagoya, JP;
Keiichiro Asai, Nagoya, JP;
Osamu Oda, Nagoya, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/128 ;
U.S. Cl.
CPC ...
H01L 2/128 ;
Abstract
A lower region having a composition of Al Ga In N (x1+x2+x3=1, 0.5≦x1≦1.0) is formed through epitaxial growth by a CVD method, and subsequently, an upper region having a composition of Al Ga In N (y1+y2+y3=1, 0≦y1≦x1−0.1) is formed through epitaxial growth by a CVD method. A boundary face divides a given III nitride film into the lower region and the upper region and the lower and upper regions have an Al content difference of 10 atomic percent or more.