The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2004

Filed:

Aug. 05, 2002
Applicant:
Inventors:

Cheng-Yuan Hsu, Hsinchu, TW;

Chi-Shan Wu, Shindian, TW;

Chih-Ming Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract

A manufacturing method of flash memory. A substrate is provided, on which a gate structure is formed. A first spacer is formed on the sidewalls of the gate structure. A source region is formed in the substrate at one side of the gate structure. A first conductive layer and a sacrificial layer are formed on the substrate. The first conductive layer and the sacrificial layer are removed until the gate structure is exposed. A thermal oxidation process is performed to form a mask layer on the first conductive layer and the gate structure. The sacrificial layer remaining on the first conductive layer is removed, and the first conductive layer is etched with a square shape. The mask layer is removed, and a second spacer is formed on the sidewalls of the second conductive layer. A drain region is formed in the substrate at one side of the conductive layer.


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