The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2004

Filed:

May. 17, 2002
Applicant:
Inventors:

John Walter Golz, Cold Spring, NY (US);

Babar Khan, Ossining, NY (US);

Joyce C. Liu, Carmel, NY (US);

Christopher Joseph Waskiewicz, Poughkeepsie, NY (US);

Teresa Jacqueline Wu, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1301 ;
U.S. Cl.
CPC ...
H01L 2/1301 ;
Abstract

As disclosed herein, a method is provided for simultaneously patterning features having a first width in a first portion such as a logic portion of an integrated circuit, and having a second width in a second portion such as an array portion of an integrated circuit. The method includes depositing a feature layer over a substrate and a hardmask material layer thereover. Photoresist patterns are then formed in the first and second portions with a critical dimension mask, and are then used to etch the hardmask material layer into hardmask patterns. Sidewall spacers are provided on sidewalls of the hardmask patterns in the second portion. Then, the feature layer is simultaneously etched in both first and second portions, using the hardmask patterns in the first portion to define features having a first width, and using the hardmask patterns and the sidewall spacers in the second portion to define features having a second width.


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