The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Jul. 30, 2002
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a reduced number of masking steps compared to the conventional processing, wherein the thickness difference can be maintained within a range of some tenths of a nanometer. The method substantially eliminates any high temperature oxidations and is also compatible with most chemical vapor deposition techniques used for gate dielectric deposition in sophisticated semiconductor devices.