The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Oct. 25, 2002
Applicant:
Inventors:
Po-An Chen, Hsinchu, TW;
James Juen Hsu, Saratoga, CA (US);
Assignee:
Winbond Electronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A semiconductor structure with common source line, the semiconductor structure has two word lines, some bit lines, a silicon-based layer and a suicide layer. The silicon-based layer is located between and electrically separated from these word lines, but is electrically coupled with these bit lines. The silicide layer is located over and electrically coupled with the silicon-based layer. Moreover, suicide layer and silicide layer could be replaced by a silicon-base conductor layer, and are directly electrically coupled with some separated doped regions that located inside a substrate.