The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Aug. 18, 2000
Applicant:
Inventors:
Densen B. Cao, Sandy, UT (US);
Dean Probst, West Jordan, UT (US);
Donald J. Roy, West Jordan, UT (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/900 ;
Abstract
A method of making a trench MOSFET structure having upper trench corner protection, the method not requiring trench corner rounding or sacrificial oxide/strip steps. The trench MOSFET structure fabricated according to the method of the present invention exhibits higher oxide breakdown voltage and lower gate-to-source capacitance.