The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Sep. 20, 2002
Dainius A. Vidmantas, Banks, OR (US);
Richard C. Smoak, Beaverton, OR (US);
Nguyen Duc Bui, San Jose, CA (US);
Lattice Semiconductor Corporation, Hillsboro, OR (US);
Abstract
An embodiment of the memory cell for an EEPROM device may comprise a trench coupling capacitor wherein the coupling oxide of the coupling capacitor is formed only in the trench (i.e., such that coupling occurs only in the trench). In addition, a first portion of a floating gate of the memory cell is formed in the trench to function as a part of the coupling capacitor as well as a floating gate. A floating gate second portion is electrically connected to the first portion. A control gate is connected to a doped region of the substrate and a thin tunnel dielectric physically separates the floating gate second portion from the coupling oxide layer and from the doped region of the substrate.