The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Jul. 16, 2002
Yueh Yale Ma, Los Altos Hills, CA (US);
Takahiro Fukumoto, Sunnyvale, CA (US);
Abstract
A method of fabricating a contact-less array of non-volatile memory cells includes: (A) forming over the substrate three stacks S S and S of first and second polysilicon layers; (B) forming in the substrate a drain region between the stacks S and S self-aligned to the edges of stacks S and S (C) forming side-wall spacers adjacent to edges of each polysilicon stack, (D) forming in the substrate a source region between stacks S and S self-aligned to the side-wall spacers; (E) forming a composite layer of HTO-Nitride-Polysilicon (ONP) over the array of memory cells immediately after step (B); (F) converting the ONP composite layer to ONO composite layer after step (D); (G) anisotropically etching the ONO composite layer to form ONO side-wall spacers adjacent to edges of the polysilicon stacks; and (H) growing select gate oxide over the row of polysilicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile