The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Aug. 16, 2002
Applicant:
Inventors:
Alexei Sadovnikov, Sunnyvale, CA (US);
Christopher John Knorr, Los Gatos, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A high frequency bipolar transistor that has a silicon germanium intrinsic base region is formed in a semiconductor fabrication process that forms the extrinsic base regions after the intrinsic base region has been formed. The extrinsic base regions are epitaxially grown single crystal silicon that is doped during the growth.