The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2004

Filed:

Aug. 12, 2002
Applicant:
Inventors:

Anilkumar C. Bhatt, Johnson City, NY (US);

Stephen J. Fuerniss, late of Endicott, NY (US);

Roy H. Magnuson, Endicott, NY (US);

Voya R. Markovich, Endwell, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 3/100 ; B05D 5/12 ;
U.S. Cl.
CPC ...
B32B 3/100 ; B05D 5/12 ;
Abstract

A method for forming a dielectric structure. A first layer is formed, wherein the first layer includes a first fully cured photoimageable dielectric (PID) material. A sticker lays is nonadhesively formed on the first layer, wherein the sticker layer includes a partially cured PID material. A second layer is nonadhesively formed on the sticker layer, wherein the second layer includes a second fully cured PID material, wherein the sticker layer is nonadhesively sandwiched between the first layer and the second layer such that the sticker layer is in non-adhesive contact with the first layer and in non-adhesive contact with the second layer, and wherein the sticker layer is capable of remaining in non-adhesive contact with the first layer and the second layer until the sticker layer is subsequently subjected to additional curing.


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