The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Feb. 01, 2002
Anritsu Corporation, Tokyo, JP;
Abstract
An n-type semiconductor substrate has a ( ) crystal plane as an upper surface. A mesa stripe portion has a trapezoidal shape including an n-type first clad layer, an active layer and a p-type second clad layer sequentially stacked on the substrate and formed along a <011> direction. A current block portion has a p-type current blocking layer and an n-type current blocking layer. A p-type third clad layer simultaneously covers both the upper surfaces of the mesa stripe portion and the current blocking portion. The inclination angle as being acute angle of the side surface of the mesa stripe portion is close to the inclination angle of a ( )B crystal plane with respect to the ( ) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the ( )B crystal plane.