The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Jun. 15, 2001
Applicant:
Inventors:
Mohamed N. Darwish, Campbell, CA (US);
Alexei Sadovinkov, Sunnyvale, CA (US);
Reda Razouk, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corp., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18222 ;
U.S. Cl.
CPC ...
H01L 2/18222 ;
Abstract
In a high speed BJT device, the method for producing the device includes forming a self-aligned BJT through the use of a single mask by making use of a single layer of polysilicon. The method includes forming a window in the polysilicon to define a base poly region and an emitter poly region. An underlying oxide/nitride stack is etched in a two etch process to define base and emitter regions for growing a small base and a small emitter. This displays small base-collector and base-emitter junction regions to reduce the capacitance.