The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Sep. 22, 2000
Kenichiro Sonoda, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device having an ESD protection element with an improved ESD resistance is obtainable even if it is formed on the same substrate together with an internal circuit. An SiGe-P well region ( ) mainly composed of SiGe having a smaller breakdown field than Si, is formed in the upper portion of a P type Si substrate ( ). A drain region ( ) and a source region ( ) are selectively formed in the surface of the SiGe-P well region ( ), and therefore, the boundary between the SiGe-P well region ( ) and the drain and source regions ( ), ( ) defines a PN junction. This results in an MOS transistor for protection comprising the SiGe-P well region ( ), the drain region ( ), the source region ( ), a gate oxide film ( ), and a gate polysilicon layer ( ).