The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Mar. 07, 2003
Makoto Dei, Hyogo, JP;
Yasuhiro Fujii, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A memory cell of a static type semiconductor memory device includes a gate electrode of an MOS transistor formed on a main surface of semiconductor substrate via an insulator film, an interlayer insulator film covering the gate electrode, a set of contact holes provided in the interlayer insulator film and reaching a source and a drain located on either side of the gate electrode, a plug portion formed within each contact hole, and a metal interconnection formed on each plug portion. A space between contact holes located in the interlayer insulator film is made smaller than a space between contact holes on a surface of the interlayer insulator film.