The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Dec. 28, 2001
Applicant:
Inventors:
Yuji Hori, Nagoya, JP;
Tomohiko Shibata, Kasugai, JP;
Mitsuhiro Tanaka, Handa, JP;
Osamu Oda, Aichi-Pref., JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ; H01L 2/920 ;
U.S. Cl.
CPC ...
H01L 2/715 ; H01L 2/920 ;
Abstract
In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer is made of a semiconducting nitride material including it least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements. The light-emitting layer can be omitted if at least one element selected from rare earth metal elements is incorporated in the underlayer.