The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Aug. 23, 2002
Joerg Dreybrodt, Bremen, DE;
Dirk Drescher, Langebrueck, DE;
Ralf Zedlitz, Dresden, DE;
Stephan Wege, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.