The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Feb. 27, 2002
Arvind Halliyal, Cupertino, CA (US);
Joong S. Jeon, Cupertino, CA (US);
Minh Van Ngo, Fremont, CA (US);
William G. En, Milpitas, CA (US);
Effiong Ibok, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device and a process for fabricating the device, including, in one embodiment, a silicon substrate; a first interfacial barrier layer on the silicon substrate, in which the first interfacial barrier layer may include aluminum oxide, silicon nitride, silicon oxynitride or a mixture thereof; and a layer of a high-K dielectric material. The device may further include a second interfacial barrier layer on the high-K dielectric material layer, and may further include a polysilicon or polysilicon-germanium gate electrode formed on the second interfacial barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile