The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Feb. 04, 2000
Applicant:
Inventors:
Shinji Nishihara, Kokubunji, JP;
Shuji Ikeda, Koganei, JP;
Naotaka Hashimoto, Koganei, JP;
Hiroshi Momiji, London, GB;
Hiromi Abe, Tokyo, JP;
Shinichi Fukada, Hino, JP;
Masayuki Suzuki, Kokubunji, JP;
Assignee:
Renesas Technology Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/100 ; H01L 2/144 ; H01L 2/701 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/100 ; H01L 2/144 ; H01L 2/701 ;
Abstract
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.