The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Dec. 21, 2001
Samsung Electronics, Co., Ltd., Kyungki-Do, KR;
Abstract
A method for fabricating a semiconductor device is provided. The method includes the steps of: forming an insulating layer having an opening region on a semiconductor substrate; forming a first ruthenium layer on the insulating layer and the opening region by sputtering at a first pressure; forming a second ruthenium layer on the first ruthenium layer by first chemical vapor deposition (CVD) at a first flow rate of oxygen gas and at a second pressure, wherein the second pressure is greater than the first pressure; and forming a third ruthenium layer on the second ruthenium layer by second CVD at a second flow rate of oxygen gas and at a third pressure, wherein the third pressure is greater than the first pressure.