The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Nov. 13, 2002
Yasuhiro Sambonsugi, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Shinji Sugatani, Kawasaki, JP;
Yoichi Morriyama, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A first well of a first conductivity type is formed in a partial region of the surface layer of a semiconductor substrate. A MOS transistor is formed in the first well. The MOS transistor has a gate insulating film, a gate electrode, and first and second impurity diffusion regions of a second conductivity type on both sides of the gate electrode. A high leak current structure is formed which makes a leak current density when a reverse bias voltage is applied across the first impurity diffusion region and first well become higher than a leak current density when the same reverse bias voltage is applied across the second impurity diffusion region and first well.