The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Aug. 31, 2000
John Charles Desko, Wescosville, PA (US);
Michael J Evans, Royersford, PA (US);
Chung-Ming Hsieh, Wyomissing, PA (US);
Tzu-Yen Hsieh, Wyomissing, PA (US);
Bailey R Jones, Lenhartsville, PA (US);
Thomas J. Krutsick, Fleetwood, PA (US);
John Michael Siket, Jr., West Lawn, PA (US);
Brian Eric Thompson, Sinking Spring, PA (US);
Steven W. Wallace, Fleetwood, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are applied over the active area. A first layer of insulating material, having a first etching rate, is applied over the active area. A second layer of insulating material having a second, greater, etch rate is applied over the first layer of insulating material to a thickness that is about twice the thickness of the first layer of insulating material. The insulating material is patterned and a window is etched through the layers of insulating material to the semiconductor substrate. Metal is applied and unwanted metal is etched away leaving metal in the window forming a Schottky contact therein. One or more barrier layers may be employed.