The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Jun. 13, 2002
Applicant:
Inventors:
Assignee:
France Télécom, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/706 ;
U.S. Cl.
CPC ...
H01L 2/706 ;
Abstract
A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites is also described. The invention may be used to provide devices having layers of planes of quantum drops.