The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Dec. 20, 1999
Eric Adler, Jericho, VT (US);
James S. Dunn, Jericho, VT (US);
Joseph Iadanza, Hinesburg, VT (US);
Jenifer E. Lary, Hinesburg, VT (US);
Kent E. Morrett, Essex Junction, VT (US);
Josef S. Watts, South Burlington, VT (US);
International Business Machines, Corp., Armonk, NY (US);
Abstract
A semiconductor device having a conduction channel which is electrically modulated. A trench structure is formed within a substrate enclosing a diffusion region. The trench structure isolates the devices formed within the diffusion region from the remaining portion of the substrate. The trench walls are made thin enough so that the width of the channel within a diffusion region may be controlled by applying an electrical potential between a trench wall and the substrate. Transistors formed within the trench structure have a conduction channel width controlled by the applied voltage permitting the gain of the transistor to be matched with the gain of other transistors on the substrate.