The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Mar. 29, 2001
Applicant:
Inventors:
Masayuki Tsuneda, Tokyo, JP;
Hideharu Itatani, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber ( ) with care or elaboration. A ruthenium raw gas feed pipe ( ) and an oxygen-containing gas feed pipe ( ) are merged with each other at a location upstream of a gas mixing chamber ( ), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O ), ozone (O ), etc.) are mixed with each other prior to entering the gas mixing chamber ( ).
Published as: