The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Aug. 24, 2001
Yu-Chi Sun, Pingjen, TW;
Tse-Yao Huang, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A memory cell fabrication avoiding bit line encroaching. A first insulating layer and a first masking layer are formed on a semiconductor substrate with a diffused region. The first masking layer and the first insulating layer are defined to form a first trench above the diffusion region. A second masking layer is formed to fill the first trench, and a hole is formed by removing a portion of the second masking layer above the diffusion region. A bit line contact is formed by removing a portion of the first insulating layer beneath the hole to expose the diffusion region. A bit line contact plug is formed by filling the bit line contact with a first conductive layer. The residual second masking layer and the first masking layer are removed to form a second trench. A bit line is formed by filling the second trench with a second conductive layer.