The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Mar. 14, 2001
Applicant:
Inventor:
Hitomi Watanabe, Chiba, JP;
Assignee:
Seiko Instruments Inc., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method for manufacturing a semiconductor device comprises the steps of forming a gate oxide film on a surface of a semiconductor substrate, subjecting the gate oxide film to a nitriding treatment, forming a gate electrode film over the surface of the semiconductor substrate, annealing the gate oxide film in an inert gas atmosphere after the nitriding treatment and after formation of the gate electrode film, and thereafter patterning the gate electrode film to form a gate electrode.