The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Sep. 12, 2002
Applicant:
Inventors:
Satoshi Matsuda, Yokohama, JP;
Kazuya Ohuchi, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/997 ; H01L 3/162 ; H01L 3/1113 ; H01L 3/1117 ; H01L 3/1119 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/997 ; H01L 3/162 ; H01L 3/1113 ; H01L 3/1117 ; H01L 3/1119 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
Abstract
A semiconductor device is disclosed. The device includes a semiconductor region and P-type and N-type diffusion layers formed in the semiconductor region. The semiconductor region includes a germanium low-concentration region containing germanium of low concentration and a germanium high-concentration region containing germanium of high concentration. A boundary region between the P-type and N-type diffusion layers lies in the germanium high-concentration region. A silicide film is formed to extend from the P-type diffusion layer over to the boundary region and the N-type diffusion layer.