The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Mar. 15, 2002
Applicant:
Inventors:
Steven T. Peake, Warrington, GB;
Raymond J. Grover, Didsbury, GB;
Assignee:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A field effect transistor structure is formed with a body semiconductor layer ( ) having source ( ), body ( ), drift region and drain ( ). An upper semiconductor layer ( ) is separated from the body by an oxide layer ( ). The upper semiconductor layer ( ) is doped to have a gate region ( ) arranged over the body ( ), a field plate region ( ) arranged over the drift region and at least one p-n junction ( ) forming at least one diode between the field plate region ( ) and the gate region ( ). A source contact ( ) is connected to both the source ( ) and the field plate region ( ).