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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6677626 B1

PDFFull Text
Date of Patent:
Jan. 13, 2004

Filed:

Nov. 10, 1999

Semiconductor device with alternating conductivity type layer and method of manufacturing the same

Applicant:
Inventors:

Youichi Shindou, Kanagawa, JP;

Yasushi Miyasaka, Nagano, JP;

Tatsuhiko Fujihira, Nagano, JP;

Manabu Takei, Nagano, JP;

Assignee:

Fuji Electric Co., Ltd., , JP;

Attorney:

Rossi & Associates

Primary Examiner:

Amir Zarabian

Assistant Examiner:

Jeff Vockrodt

Int. Cl.
CPC ...
C21B 7/16 ;
U.S. Cl.
CPC ...
C21B 7/16 ;
Abstract

This invention achieves a high inverse voltage of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. An n high resistance region is formed at the periphery of a drift layer composed of a parallel pn layer of n drift regions and p partition regions. The impurity density N of the n high resistance region is 5.62×10 ×V (cm ) or less. V denotes the withstand voltage (V). An n low resistance region is arranged adjacent to the n high resistance region.

Find Patent Forward Citations

Shindou, Youichi. (2004). Semiconductor device with alternating conductivity type layer and method of manufacturing the same (U.S. Patent No. 6677626). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6677626

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