The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2004

Filed:

Nov. 04, 1999
Applicant:
Inventor:

Farris D. Malone, Richardson, TX (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/122 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/122 ;
Abstract

An embodiment of the instant invention is a method of implementing a vanishingly small integrated circuit diode comprising the steps of: forming an area of a thin dielectric film ( of FIG. ) over a conductive silicon surface ( of FIG. ) of one conductivity type in a region of a thick dielectric film ( of FIG. ) over the conductive silicon surface; forming a first conductive path from the conductive silicon surface to an operating circuit; forming a conductive silicon film ( of FIG. ) of a second conductivity type over the thin dielectric region; forming a second conductive path from the conductive silicon film to the operating circuit; and causing at least one region of the second conductivity type in the conductive silicon surface and at least one third conductive path through the thin dielectric film wherein said causing consists of applying a voltage or applying a current.


Find Patent Forward Citations

Loading…