The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
Apr. 11, 2002
Kozo Ogino, Kawasaki, JP;
Morimi Osawa, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
(S ) A reference forward scattering intensity &egr; is determined as equal to such a slice level that by adjusting the width of a pattern having the minimum width included in a block pattern repeatedly used and collectively exposed, the slice level that is in the range of 30 to 70% of the peak value of a forward scattering intensity distribution of the pattern becomes equal to the design width of the pattern. (S ) in each pattern in the block pattern a pattern width is adjusted such that the width of a forward scattering intensity distribution at &egr; becomes equal to the design width of the pattern. Further, a collected exposure dose Qcp is determined such that Qcp(&egr; +&agr; ′&eegr;)=Eth holds, where Eth is a threshold value for pattern developing, q is a backscattering coefficient and &agr; ′ is an effective pattern area density. In an electron projection method, Eth is determined in &egr; +&agr; ′&eegr;=Eth, then &agr; ′ is determined, and a pattern width is determined from a function &egr; of a design width and a pattern width.