The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2004

Filed:

Aug. 08, 2002
Applicant:
Inventor:

Loren A. Chow, Santa Clara, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract

An apparatus including a contact point on a substrate; a first dielectric layer comprising a material having a dielectric constant less than five formed on the contact point, and a different second dielectric layer formed on the substrate and separated from the contact point by the first dielectric layer. Collectively, the first and second dielectric layers comprise a composite dielectric layer having a composite dielectric constant value. The contribution of the first dielectric layer to the composite dielectric value is up to 20 percent. Also, a method including depositing a composite dielectric layer over a contact point on a substrate, the composite dielectric layer comprising a first material having a dielectric constant less than 5 and a second different second material, and forming a conductive interconnection through the composite dielectric layer to the contact point.


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