The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jul. 02, 2001
Yong-Bae Kim, Cupertino, CA (US);
Philippe Schoenborn, San Mateo, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A process for removal of a photoresist mask used to etch openings in low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and for removing etch residues remaining from either the etching of the openings or removal of the resist mask, while inhibiting damage to the low k dielectric material comprises. The structure is exposed to a reducing plasma to remove a portion of the photoresist mask, and to remove a portion of the residues remaining from formation of the openings in the layer of low k dielectric material. The structure is then exposed to an oxidizing plasma to remove any remaining etch residues from the openings in the layer of low k dielectric material or removal of the resist mask.