The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jun. 13, 2002
Applicant:
Inventors:
Olivier Menut, Grenoble, FR;
Herve Jaouen, Meylan, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1265 ; H01L 2/18238 ; H01L 2/18239 ; H01L 2/18228 ; H01L 2/104 ;
U.S. Cl.
CPC ...
H01L 2/1265 ; H01L 2/18238 ; H01L 2/18239 ; H01L 2/18228 ; H01L 2/104 ;
Abstract
A method of fabricating an integrated circuit including a monocrystalline silicon substrate, a layer of polycrystalline silicon on the top surface of the substrate and doped with at least two dopants with different rates of diffusion, in which method annealing is performed at a temperature and for a time such that a first dopant diffuses into a first zone and a second dopant diffuses into a second zone larger than the first zone.