The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Dec. 06, 2001
Oleg V. Kononchuk, Brush Prairie, WA (US);
Sergei V. Koveshnikov, Vancouver, WA (US);
Zbigniew J. Radzimski, Brush Prairie, WA (US);
Neil A. Weaver, Battle Ground, WA (US);
SEH America, Inc., Vancouver, WA (US);
Abstract
An improved method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma while doping the crystal with an electrically inactive material such as nitrogen, carbon, or tin, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.