The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Aug. 15, 2002
Masato Fujinaga, Tokyo, JP;
Tatsuya Kunikiyo, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device having a self-aligned contact structure. To determine the position of a contact plug in a self-aligned manner, silicon nitride films are provided around a gate electrode and a bitline, respectively. Between the gate electrode and bitline, and the silicon nitride films are provided low dielectric constant insulation films having a dielectric constant lower than that of the silicon nitride films. Further, the low dielectric constant insulation films are provided in contact with the gate electrode and bitline. The presence of the low dielectric constant insulation films suppresses the increase in parasitic capacitance resulting from the presence of the silicon nitride films between the gate electrode and bitline, and the contact plug.